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| UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC PZTA14 is a Darlington transistor. FEATURES *Collector-Emitter Voltage: VCES = 30V *Collector Power Dissipation: Pc (max) = 1000 mW 1 2 3 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature (Ta=25C) SYMBOL VCBO VCES VEBO Pc Ic Tj TSTG VALUE 30 30 10 1000 500 150 -55 ~ +150 UNIT V V V mW mA C C ELECTRICAL CHARACTERISTICS (Ta =25C, unless otherwise specified) PARAMETER Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter on Voltage Current Gain Bandwidth Product Pulse test: Pulse Width<300s, Duty Cycle=2% SYMBOL BVCES ICBO IEBO hFE VCE(sat) VBE(on) fT TEST CONDITIONS Ic=100A,IB=0 VCB=30V,IE=0 VEB=10V,Ic=0 VCE=5V,Ic=100mA Ic=100mA,IB=0.1mA VCE=5V,Ic=100mA VCE=5V,Ic=10mA, f=100MHz MIN 30 MAX 100 100 UNIT V nA nA V V MHz 20000 1.5 2.0 125 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R207-004,B UTC PZTA14 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R207-004,B |
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